2N2369A1 datasheet(2/2 Pages) SEME-LAB | HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2 page

2N2369A

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Document Number 5277

Issue 1

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and

reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that

datasheets are current before placing orders.

Test Conditions

Min.

Typ.

Max.

IC = 10mA

IC = 10µA

IE = 10µA

VCE = 20V

VCB = 20V

TA = +150°C

IC = 10mA

IB = 1mA

TA = +125°C

IC = 30mA

IB = 3mA

IC = 100mA

IB = 10mA

IC = 10mA

IB = 1mA

IC = 30mA

IB = 3mA

IC = 100mA

IB = 10mA

IC = 10mA

IB = 1mA

TA = -55°C to +125°C

IC = 10mA

VCE = 0.35V

IC = 10mA

VCE = 1V

IC = 30mA

VCE = 0.40V

IC = 100mA

VCE = 1V

IC = 10mA

VCE = 0.35V

TA = –55°C

IC = 10mA

VCE = 10V

f = 100MHz

IE = 0

VCB = 5V

f = 1MHz

IC = 10mA

VCC = 10V

IB1 = –IB2 = 10mA

IC = 10mA

VCC = 3V

IB1 = 3mA

IB2 = –1.5mA

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

V(BR)CEO*

Collector – Emitter Breakdown Voltage

V(BR)CBO

Collector – Base Breakdown Voltage

V(BR)EBO

Emitter – Base Breakdown Voltage

ICES

Collector – Emitter Cut-off Current

ICBO

Collector – Base Cut-off Current

VCE(sat)*

Collector – Emitter Saturation Voltage

VBE(sat)*

Base – Emitter Saturation Voltage

hFE*

DC Current Gain

Transition Frequency

Ccbo

Output Capacitance

Storage Time

ton

Turn–On Time

toff

Turn–Off Time

4.5

0.40

0.20

0.30

0.25

0.5

0.70

0.8

0.85

0.9

1.15

1.1

1.6

0.59

1.02

120

500

675

2.3

613

912

µA

—

MHz

* Pulse Test: tp ≤ 300µs, δ≤ 2%.

Parameter

Unit

Número de Pieza	Descripción de Componentes	Html View	Fabricante
2N2222ACSM	HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2222ACSM4	HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2222ADCSM	DUAL HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2369ACSM	HIGH SPEED MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2907ACSM	HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2907ADCSM	DUAL HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N930CSM	HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2484CSM	HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2894ACSM	HIGH SPEED MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB
2N2894CSM	HIGH SPEED MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS	1 2	Seme LAB

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