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74LVC1G58GM Datasheet(PDF) 1 Page - NXP Semiconductors |
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74LVC1G58GM Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 18 page 1. General description The 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, NOR, XOR, inverter and buffer. All inputs can be connected to VCC or GND. The three inputs (A, B and C) are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. The gate switches at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT− is defined as the hysteresis voltage VH. 2. Features s Wide supply voltage range from 1.65 V to 5.5 V s 5 V tolerant input/output for interfacing with 5 V logic s High noise immunity s Complies with JEDEC standard: x JESD8-7 (1.65 V to 1.95 V) x JESD8-5 (2.3 V to 2.7 V) x JESD8B/JESD36 (2.7 V to 3.6 V). s ±24 mA output drive (V CC = 3.0 V) s ESD protection: x HBM EIA/JESD22-A114-B exceeds 2000 V x MM EIA/JESD22-A115-A exceeds 200 V. s CMOS low power consumption s Latch-up performance exceeds 250 mA s Direct interface with TTL levels s Inputs accept voltages up to 5 V s Multiple package options s Specified from −40 °C to +85 °C and −40 °C to +125 °C. 74LVC1G58 Low-power configurable multiple function gate Rev. 01 — 15 September 2004 Product data sheet |
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