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| BUZ11 |
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 FAIRCHILD
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2 page 
©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified BUZ11 UNITS Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 50 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Continuous Drain Current TC = 30 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 30 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 120 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current IDSS TJ = 25 oC, V DS = 50V, VGS = 0V - 20 250 µA TJ = 125 oC, V DS = 50V, VGS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 15A, VGS = 10V (Figure 8) - 0.03 0.04 Ω Forward Transconductance (Note 2) gfs VDS = 25V, ID = 15A (Figure 11) 4 8 - S Turn-On Delay Time td(ON) VCC = 30V, ID ≈ 3A, VGS = 10V, RGS = 50Ω, RL = 10Ω -30 45 ns Rise Time tr - 70 110 ns Turn-Off Delay Time td(OFF) - 180 230 ns Fall Time tf - 130 170 ns Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1500 2000 pF Output Capacitance COSS - 750 1100 pF Reverse Transfer Capacitance CRSS - 250 400 pF Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD TC = 25 oC- - 30 A Pulsed Source to Drain Current ISDM TC = 25 oC - - 120 A Source to Drain Diode Voltage VSD TJ = 25 oC, I SD = 60A, VGS = 0V - 1.7 2.6 V Reverse Recovery Time trr TJ = 25 oC, I SD = 30A, dISD/dt = 100A/µs, VR = 30V - 200 - ns Reverse Recovery Charge QRR - 0.25 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). BUZ11 |
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