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FMMT4400 Datasheet(Hoja de datos) 2 Page - Zetex Semiconductors

No. de Pieza. FMMT4400
Descripción  SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
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Fabricante  ZETEX [Zetex Semiconductors]
Página de inicio  http://www.diodes.com/
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SWITCHING CHARACTERISTICS (at Tamb= 25°C )
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Turn-On Time
ton
35
ns
VCC=30V, VBE(off)=2V
IC=150mA, IB1=15mA
(See Fig.1)
Turn-Off Time
toff
255
ns
VCC=30V, IC=150mA
IB1=IB2=15mA
(See Fig. 2)
SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 – FEBRUARY 1997
7
PARTMARKING DETAILS:
FMMT4400 - 1KZ
FMMT4401 - 1L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)
PARAMETER
SYMBOL
FMMT4400
FMMT4401
UNIT CONDITIONS
MIN.
MAX.
MIN.
MAX.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
40
40
V IC=1mA, IB=0
Collector-Base
Breakdown Voltage
V(BR)CBO
60
60
V IC=0.1mA, IE=0
Emitter-Base
Breakdown Current
V(BR)EBO
66
V IE=0.1mA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
0.1
0.1
µ
A VCE=35V
VEB(off) =0.4V
Base Cut-Off
Current
IBEX
0.1
0.1
µ
A VCE=35V
VEB(off) =3V
Static Forward
Current
TransferRatio
hFE
20
40
50
20
150
20
40
80
100
40
300
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=150mA, VCE=1V*
IC=500mA, VCE=2V*
Collector-Emitter
Saturation Voltage
VCE(sat)
0.4
0.75
0.4
0.75
V
V
IC=150mA,IB=15mA*
IC=500mA,IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.75
0.95
1.2
0.75
0.95
1.2
V
V
IC=150mA,IB=15mA*
IC=500mA,IB=50mA*
Transition
Frequency
fT
200
250
MHz IC=20mA,VCE=10V
f=100kHz
Output Capacitance Cobo
6.5
6.5
pF VCB=5 V,IE=0
f=100kHz
Input Capacitance
Cibo
30
30
pF VBE=0.5V, IC=0
f=100kHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT4400
FMMT4401
C
B
E
PAGE NUMBER
FMMT4400
FMMT4401
PAGE NUMBER




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