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IRL3202 Datasheet(PDF) 2 Page - International Rectifier |
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IRL3202 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRL3202 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA D V(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.019 VGS = 4.5V, ID = 29A ––– ––– 0.016 W VGS = 7.0V, ID = 29A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 29A ––– ––– 25 µA VDS = 20V, VGS = 0V ––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 10V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V Qg Total Gate Charge ––– ––– 43 ID = 29A Qgs Gate-to-Source Charge ––– ––– 12 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 13 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 9.8 ––– VDD = 10V tr Rise Time ––– 100 ––– ns ID = 29A td(off) Turn-Off Delay Time ––– 63 ––– RG = 9.5W, VGS = 4.5V tf Fall Time ––– 82 ––– RD = 0.3W, Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 2000 ––– VGS = 0V Coss Output Capacitance ––– 800 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5 S D G Repetitive rating; pulse width limited by max. junction temperature. I SD £ 29A, di/dt £ 63A/µs, V DD £ V(BR)DSS, TJ £ 150°C Notes: Starting TJ = 25°C, L = 0.64mH RG = 25W , IAS = 29A. Pulse width £ 300µs; duty cycle £ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V trr Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 29A Qrr Reverse Recovery Charge ––– 130 190 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 48 190 A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current |
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