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L608 Datasheet(PDF) 1 Page - IXYS Corporation |
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L608 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page 1 - 2 © 2004 IXYS All rights reserved FMD 80-0045PS IXYS reserves the right to change limits, test conditions and dimensions. I D25 = 100 A V DSS = 55 V R DSon (typ.) = 3.8 m Ω Ω Ω Ω Ω Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM 1 5 Features • trench MOSFET - very low on state resistance R DSon - fast switching • Schottky diode - low forward voltage - extremely fast switching - blocking capability optimized for elevated temperature • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 Applications • automotive - choppers - replacing series resistors for DC drives, heating etc. - control of SR drives - DC-DC converters - electronic switches -replacing relays and fuses • power supplies - DC-DC converters - solar inverters • battery supplied systems - choppers for drives in hand held tools - battery chargers IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 MOSFET Symbol Conditions Maximum Ratings V DSS T VJ = 25°C to 150°C 55 V V GS ±20 V I D25 T C = 25°C 150 A I D90 T C = 90°C 110 A Symbol Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) min. typ. max. R DSon V GS = 10 V; ID = ID90 3.8 4.9 m Ω V GSth V DS = 20 V; ID = 1 mA 2 4 V I DSS V DS = 55V; VGS = 0 V; TVJ = 25°C 1 µA T VJ = 125°C 0.1 mA I GSS V GS = ±20 V; VDS = 0 V 0.2 µA Q g 86 nC Q gs 18 nC Q gd 25 nC t d(on) 25 ns t r 50 ns t d(off) 70 ns t f 40 ns R thJC 1K/W R thJH with heatsink compound 1.5 K/W V GS= 10 V; VDS = 44 V; ID = 25 A V GS= 10 V; VDS = 30 V; I D = 25A; RG = 10 Ω 3 4 1 2 Preliminary data |
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