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L608 Datasheet(PDF) 1 Page - IXYS Corporation

No. de pieza L608
Descripción Electrónicos  Chopper with Trench Power MOSFET and Schottky Diode
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

L608 Datasheet(HTML) 1 Page - IXYS Corporation

  L608 Datasheet HTML 1Page - IXYS Corporation L608 Datasheet HTML 2Page - IXYS Corporation  
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© 2004 IXYS All rights reserved
FMD 80-0045PS
IXYS reserves the right to change limits, test conditions and dimensions.
I
D25
= 100 A
V
DSS
= 55 V
R
DSon (typ.) = 3.8 m
Chopper with
Trench Power MOSFET
and Schottky Diode
in ISOPLUS i4-PACTM
1
5
Features
• trench MOSFET
- very low on state resistance R
DSon
- fast switching
• Schottky diode
- low forward voltage
- extremely fast switching
- blocking capability optimized for
elevated temperature
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• automotive
- choppers - replacing series resistors
for DC drives, heating etc.
- control of SR drives
- DC-DC converters
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
• battery supplied systems
- choppers for drives in hand held tools
- battery chargers
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ = 25°C to 150°C
55
V
V
GS
±20
V
I
D25
T
C = 25°C
150
A
I
D90
T
C = 90°C
110
A
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS = 10 V; ID = ID90
3.8
4.9 m
V
GSth
V
DS = 20 V; ID = 1 mA
2
4
V
I
DSS
V
DS = 55V; VGS = 0 V; TVJ =
25°C
1
µA
T
VJ = 125°C
0.1
mA
I
GSS
V
GS = ±20 V; VDS = 0 V
0.2
µA
Q
g
86
nC
Q
gs
18
nC
Q
gd
25
nC
t
d(on)
25
ns
t
r
50
ns
t
d(off)
70
ns
t
f
40
ns
R
thJC
1K/W
R
thJH
with heatsink compound
1.5
K/W
V
GS= 10 V; VDS = 44 V; ID = 25 A
V
GS= 10 V; VDS = 30 V;
I
D = 25A; RG = 10 Ω
3
4
1
2
Preliminary data


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