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BTB08 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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BTB08 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
2 / 8 page BTB08 Rev.D Nov.-2015 DATA SHEET http://www.fsbrec.com 2 / 8 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages VDRM/VRRM 600/700 V On-state rms current(full sine wave TC=105℃) IT(RMS) 8 A Non repetitive surge peak on-state current(full cycle, Tj initial=25°C) ITSM(F=50Hz t=20ms) 80 A Non repetitive surge peak on-state current(full cycle, Tj initial=25°C) ITSM(F=60Hz t=16.7ms) 84 A I2t value for fusing I2t(tp=10ms) 36 A2s Critical rate of rise of on-state current IG =2xIGT, tr≤100 ns(F=120Hz Tj=125℃) dI/dt 50 A/μs Peak gate current(tp =20μs Tj=125℃) IGM 4.0 A Average gate power dissipation(Tj=125℃) PG(AV) 1.0 W Operating junction temperature range Tj -40~125 ℃ Storage junction temperature range Tstg -40~150 ℃ Junction to ambient Rth(j-a) 60 /W ℃ Junction to case for AC Rth(j-c) 1.6 符号 Symbol 测试条件 Test Conditions 信号区 Quadrant BTB08 单位 Unit TW SW CW BW IGT (1) VD=12V RL=30Ω I-II-III Max. 5 10 35 50 mA VGT VD=12V RL=30Ω I-II-III Max. 1.3 V VGD VD=VDRM RL=3.3KΩ Tj=125℃ I-II-III Min. 0.2 V IH (2) IT=100mA Max. 10 15 35 50 mA IL IG=1.2IGT I-III Max. 10 25 50 70 mA II 15 30 60 80 (dV/dt)(2) VD=67% VDRM gate open Tj=125℃ Min. 20 40 400 1000 V/μs (dI/dt)c(2) (dV/dt)c=0.1V/μs Tj=125℃ Min. 3.5 5.4 - - A/ms (dV/dt)c=10V/μs Tj=125℃ Min. 1.5 2.98 - - Without snubber Tj=125℃ Min. - - 4.5 7 Note 1:minimum IGT is guaranted at 5% of IGT max. Note 2:for both polarities of A2 referenced to A1. 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) 免缓冲器和逻辑电平(3象限) / Snubberless and logic level(3 quadrants) |
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