KSD882 datasheet(2/6 Pages) FOSHAN

No. de pieza	KSD882

Descripción Electrónicos	Silicon NPN transistor in a TO-126 Plastic Package.

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Fabricante Electrónico	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 6 page

KSD882

Rev.E Mar.-2016

DATA SHEET

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

3.0

A

Collector Power Dissipation

PC

1.0

W

Collector Power Dissipation

PC(TC=25 )

℃

10

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=30V

IE=0

1.0

μA

Emitter Cut-Off Current

IEBO

VEB=3.0V

IC=0

1.0

μA

DC Current Gain

hFE(1)

VCE=2.0V

IC=1.0A

60

160

400

hFE(2)

VCE=2.0V

IC=20mA

30

150

Collector to Emitter Saturation

Voltage

VCE(sat) IC=2.0A

IB=0.2A

0.3

0.5

V

Base to Emitter Saturation Voltage

VBE(sat) IC=2.0A

IB=0.2A

1.0

2.0

V

Transition Frequency

fT

VCE=5.0V

IC=0.1A

90

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

45

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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KSD882 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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