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STP2327 Datasheet(PDF) 1 Page - Stanson Technology |
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STP2327 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 5 page STP2327 P Channel Enhancement Mode MOSFET -1.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2327 2013. Rev.1 DESCRIPTION STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-6L PART MARKING Y: Year Code A: date Code FEATURE l -100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.) @VGS = -10V l -100V/-0.5.0A, RDS(ON) = 600m-ohm @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23-6L package design |
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Descripción similar - STP2327 |
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