2SC2130 datasheet(1/4 Pages) JIANGSU

No. de pieza	2SC2130

Descripción Electrónicos	TO-92 Plastic-Encapsulate Transistors

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Fabricante Electrónico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de inicio	http://www.cj-elec.com/en/

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TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SC2130

TRANSISTOR (NPN)

FEATURES

High DC Current Gain

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

45

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

40

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=25V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=1V, IC=100mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=20mA

0.5

V

Base-emitter voltage

VBE

VCE=1V, IC=10mA

0.8

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

13

pF

Transition frequency

fT

VCE=5V,IC=10mA

100

MHz

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

100-200

160-320

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

0.8

A

PC

Collector Power Dissipation

600

mW

RθJA

Thermal Resistance From Junction To Ambient

208

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

,

,2015

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