2SD1991A datasheet(1/3 Pages) JIANGSU

No. de pieza	2SD1991A

Descripción Electrónicos	TO-92 Plastic-Encapsulate Transistors

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Fabricante Electrónico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de inicio	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SD1991A

TRANSISTOR (NPN)

FEATURES

High Foward Current Transfer Ratio hFE

Low Collector to Emitter Saturation Voltage VCE(sat).

Allowing Supply with the Radial Taping.

MAXIMUM RATINGS (Ta=25

unless otherwise noted

℃

)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

100

mA

PC

Collector Power Dissipation

400

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ uless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

T

yp

M

ax

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=2mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA,IC=0

7

V

Collector cut-off current

ICBO

VCB=20V,IE=0

1

μA

Emitter cut-off current

IEBO

VEB=7V,IC=0

1

μA

hFE(1)

VCE=10V,IC=2mA

160

460

DC current gain

hFE(2)

VCE=2V,IC=100mA

90

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.3

V

Transition frequency

fT

VCE=10V,IC=2mA,f=200MHz

150

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

3.5

pF

CLASSIFICATION OF

hFE(1)

Rank

Q

R

S

Range

160-260

210-340

290-460

TO-92

1.

EMITTER

2.

COLLECTOR

3.

BASE

www.cj-elec.com

1

C,Dec,2015

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2SD1991A Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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