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2SD2098 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

No. de pieza 2SD2098
Descripción Electrónicos  SOT-89-3L Plastic-Encapsulate Transistors
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Fabricante Electrónico  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Página de inicio  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SD2098 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD2098 FEATURES
Excellent DC current gain characteristics
Complements the 2SB1386
MAXIMUM RATINGS (Ta=25
unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
5
A
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55
~150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=50μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50μA, =0
6
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.5
μA
DC current gain
hFE
VCE=2V,IC=0.5A
120
390
Collector-emitter saturation voltage
VCE(sat)
IC=4A,IB=100mA
1
V
Transition frequency
fT
VCE=6V,IC=50mA,f=100MHz
150
MHz
Collector output capacitance
Cob
VCB=20V,IE=0,f=1MHz
30
pF
CLASSIFICATION OF hFE
Rank
Q
R
Range
120-270
180-390
Marking
AHQ
AHR
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
℃
℃
www.cj-elec.com
1
C,Nov,2015


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