2SA1313 datasheet(1/4 Pages) JIANGSU

No. de pieza	2SA1313

Descripción Electrónicos	SOT-23 Plastic-Encapsulate Transistors

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Fabricante Electrónico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SA1313

TRANSISTOR (PNP)

FEATURES

Excellent hFE Linearity

: hFE(2) =25(Min)at VCE =-6V,IC=- 400mA.

High Voltage :VCEO=-50V(Min)

Complements to the 2SC3325.

MARKING : ACO,ACY

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55

~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

hFE(1)

VCE=-1V,IC=-100mA

70

240

25

DC current gain

hFE(2)

VCE=-6V,IC=-400mA

O

Y

40

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,IB=-10mA

-0.25

V

Base-emitter voltage

VBE

VCE=-1V,IC=-100mA

-1

V

Transition frequency

fT

VCE=-6V,IC=-20mA

200

MHz

Collector output capacitance

Cob

VCB=-6V,IE=0,f=1MHz

13

pF

CLASSIFICATION OF

hFE(1)

Rank

O

Y

Range

70-140

120-240

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,Oct,2014

JC T

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