AM4N60I datasheet(1/5 Pages) ANALOGPOWER

No. de pieza	AM4N60I

Descripción Electrónicos	N-Channel 600-V (D-S) MOSFET

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Fabricante Electrónico	ANALOGPOWER [Analog Power]

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Analog Power

AM4N60I

N-Channel 600-V (D-S) MOSFET

VDS (V)

ID (A)

600

4

Symbol

Limit

Units

VDS

600

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

4

IDM

16

IS

4

ISM

16

Power Dissipation

a

TC=25°C

PD

50

W

TJ, Tstg

-55 to 175

°C

Symbol

Maximum

Units

RθJA

40

RθJC

3

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Gate-Source Voltage

PRODUCT SUMMARY

rDS(on) (Ω)

2 @ VGS = 10V

A

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case

Pulsed Diode Forward Current

b

A

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• Power Supplies

• Motor Drives

• Consumer Electronics

TO-251

1

Publication Order Number:

DS_AM4N60I_1A

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AM4N60I Datasheet(PDF) 1 Page - Analog Power

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