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MPSA55 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MPSA55 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page MPSA55 -0.5A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 16-Nov-2012 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 2 Base 1 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplification. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -4 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 625 mW Thermal Resistance From Junction To Ambient RθJA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO -60 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -60 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -4 - - V IE= -0.1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -60V, IE=0 Collector cut-off current ICEO - - -0.1 µA VCE= -60V, IB=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -4V, IC=0 DC Current Gain hFE 100 - - VCE= -1V, IC= -10mA 100 - - VCE= -1V, IC= -100mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.25 V IC= -100mA, IB= -10mA Base to Emitter Voltage VBE - - -1.2 V IC= -100mA, VCE= -1V Transition Frequency fT 50 - - MHz VCE= -1V, IC= -100mA, f=100MHz TO-92 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.70 F 0.30 0.51 B 4.30 4.70 G 1.27 TYP. C 12.70 - H 1.10 1.40 D 3.30 3.81 J 2.42 2.66 E 0.36 0.56 K 0.36 0.76 1 1 1 1Emitter 2 2 2 2Base 3 3 3 3Collector |
Número de pieza similar - MPSA55 |
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Descripción similar - MPSA55 |
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