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74HC2G66 Datasheet(PDF) 4 Page - NXP Semiconductors |
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74HC2G66 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 20 page 2004 May 19 4 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 MNB004 handbook, halfpage 2 1 1 1 1 X1 6 5 7# 1 X1 # 3 Fig.3 IEC logic symbol. handbook, halfpage MNB005 GND nZ nY nE Fig.4 Logic diagram. RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of Ptot derates linearly with 2.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC2G66 74HCT2G66 UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 10.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V − 6.0 500 − 6.0 500 ns VCC = 6.0 V −− 400 −−− ns VCC = 9.0 V −− 250 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +11.0 V IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V; note 1 −±20 mA IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V; note 1 −±20 mA IO output source or sink current −0.5V<VO <VCC + 0.5 V; note 1 −±25 mA ICC, IGND VCC or GND current note 1 −±30 mA Tstg storage temperature −65 +150 °C Ptot power dissipation of package Tamb = −40 °C to +125 °C; note 2 − 300 mW Ps power dissipation per switch − 100 mW |
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