SI5513DC-T1-E3 datasheet(5/7 Pages) VISHAY

No. de pieza	SI5513DC-T1-E3

Descripción Electrónicos	Complementary 20-V (D-S) MOSFET

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Si5513DC

Vishay Siliconix

Document Number: 71186

S-42138—Rev. F, 15-Nov-04

www.vishay.com

5

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

10−3

10−2

110

10−1

10−4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

Square Wave Pulse Duration (sec)

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

P−CHANNEL

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru 4 V

TC = −55_C

125_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1.5 V

2 V

2.5 V

3 V

3.5 V

0.0

0.1

0.2

0.3

0.4

0

2468

10

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

ID − Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

On-Resistance vs. Drain Current

Capacitance

VGS = 3.6 V

0

100

200

300

400

500

600

04

8

12

16

20

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SI5513DC-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix

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