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EC732320 Datasheet(PDF) 1 Page - E-CMOS Corporation

No. de pieza EC732320
Descripción Electrónicos  20V, 800mA N-Channel MOSFET
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Fabricante Electrónico  E-CMOS [E-CMOS Corporation]
Página de inicio  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC732320 Datasheet(HTML) 1 Page - E-CMOS Corporation

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EC732320
20V、
、800mA N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4K24N-Rev.F001
Symbol
Characterizes
Typ.
Max.
Units
RθJA
Thermal Resistance,Junction-to-Ambient (Note 2)
400
℃/W
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Drain Current-Continuous(Tc=25
)
ID
800
mA
Drain Current-Continuous(Tc=100
)
ID
510
mA
Drain Current-Pulsed (Note 1)
IDM
3.2
A
Maximum Power Dissipation
PD
312
mW
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Desc
esc
esc
escription
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use
in buttery protection, power switching application and a wide variety of other applications
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150
operating temperature
Main Application: notebook, load switching, battery
protection, hand-held intstusment etc.
Main Product Characteristics
ABSOLUTE MAXIMUM RATINGS
Thermal Resistance
VDSS
20V
RDS(on)
300 mΩ(typ.)
ID
800mA
SOT523
Marking and pin
Assignment
Schematic diagram


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