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SI4816BDY Datasheet(PDF) 7 Page - Vishay Siliconix |
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SI4816BDY Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Si4816BDY Vishay Siliconix New Product Document Number: 73026 S-41510—Rev. A, 09-Aug-04 www.vishay.com 7 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2 Time (sec) 0 25 50 75 100 125 150 VDS = 30 V 10 1 0.00001 Reverse Current vs. Junction Temperature TJ − Temperature (_C) 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 On-Resistance vs. Gate-to-Source Voltage VGS − Gate-to-Source Voltage (V) ID = 9.5 A 0.001 0 1 100 40 60 10 0.1 Single Pulse Power, Junction-to-Ambient 20 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150_C 40 10 1 Source-Drain Diode Forward Voltage VSD − Source-to-Drain Voltage (V) TJ = 25_C 0.01 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TC = 25_C Single Pulse 0.1 IDM Limited ID(on) Limited *rDS(on) Limited BVDSS Limited 1 ms 10 ms 100 ms dc VDS = 24 V 1 0.1 0.01 0.0001 0.001 1 s 10 s VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified |
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