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CSD25501F3T Datasheet(PDF) 1 Page - Texas Instruments |
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CSD25501F3T Datasheet(HTML) 1 Page - Texas Instruments |
1 / 13 page 0.7 mm 0.6 mm 0.2 mm R G D G S R C Product Folder Order Now Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD25501F3 SLPS692 – OCTOBER 2017 CSD25501F3 –20-V P-Channel FemtoFET™ MOSFET 1 1 Features 1 • Low On-Resistance • Ultra-Low Qg and Qgd • Ultra-Small Footprint – 0.7 mm × 0.6 mm • Low Profile – 0.22-mm Max Height • Integrated ESD Protection Diode • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Battery Applications • Handheld and Mobile Applications 3 Description This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-k Ω clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V. Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage –20 V Qg Gate Charge Total (–4.5 V) 1.02 nC Qgd Gate Charge Gate-to-Drain 0.09 nC RDS(on) Drain-to-Source On-Resistance VGS = –1.8 V 120 m Ω VGS = –2.5 V 86 VGS = –4.5 V 64 VGS(th) Threshold Voltage –0.75 V Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD25501F3 3000 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) Tape and Reel CSD25501F3T 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C (unless otherwise stated) VALUE UNIT VDS Drain-to-Source Voltage –20 V VGS Gate-to-Source Voltage –20 V ID Continuous Drain Current(1) –3.6 A IDM Pulsed Drain Current(1)(2) –13.6 A PD Power Dissipation(1) 500 mW V(ESD) Human-Body Model (HBM) 4000 V Charged-Device Model (CDM) 2000 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Typical RθJA = 255°C/W mounted on FR4 material with minimum Cu mounting area. (2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. Typical Part Dimensions Top View |
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