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0.2 mm

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD25501F3

SLPS692 – OCTOBER 2017

CSD25501F3 –20-V P-Channel FemtoFET™ MOSFET

1

1 Features

1

•

Low On-Resistance

•

•

Ultra-Small Footprint

–

0.7 mm × 0.6 mm

•

Low Profile

–

0.22-mm Max Height

•

Integrated ESD Protection Diode

•

Lead and Halogen Free

•

RoHS Compliant

2 Applications

•

Optimized for Load Switch Applications

•

Battery Applications

•

Handheld and Mobile Applications

3 Description

This

–20-V,

64-mΩ,

P-Channel

FemtoFET™

MOSFET is designed and optimized to minimize the

footprint in many handheld and mobile applications.

This technology is capable of replacing standard

small signal MOSFETs while providing a substantial

reduction in footprint size. The integrated 10-k

Ω

be operated above the maximum internal gate oxide

value of –6 V depending on duty cycle. The gate

increased above –6 V.

Product Summary

TYPICAL VALUE

UNIT

Drain-to-Source Voltage

–20

V

Gate Charge Total (–4.5 V)

1.02

nC

Gate Charge Gate-to-Drain

0.09

nC

Drain-to-Source

On-Resistance

120

m

Ω

86

64

Threshold Voltage

–0.75

V

Device Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD25501F3

3000

7-Inch Reel

Femto

0.73-mm × 0.64-mm

Land Grid Array (LGA)

Tape

and

Reel

CSD25501F3T

250

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

VALUE

UNIT

Drain-to-Source Voltage

–20

V

Gate-to-Source Voltage

–20

V

Continuous Drain Current(1)

–3.6

A

Pulsed Drain Current(1)(2)

–13.6

A

Power Dissipation(1)

500

mW

Human-Body Model (HBM)

4000

V

Charged-Device Model (CDM)

2000

Operating Junction,

Storage Temperature

–55 to 150

°C

minimum Cu mounting area.

(2) Pulse duration

≤ 100 μs, duty cycle ≤ 1%.

Typical Part Dimensions

Top View