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TPC6003 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TPC6003
Descripción Electrónicos  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6003 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPC6003
2002-01-15
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
¾
¾
10
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
¾
¾
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = -20 V
15
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
¾
2.5
V
VGS = 4.5 V, ID = 3 A
¾
25
32
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
¾
19
24
m
W
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
3.5
7
¾
S
Input capacitance
Ciss
¾
1250
¾
Reverse transfer capacitance
Crss
¾
155
¾
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
170
¾
pF
Rise time
tr
¾
5
¾
Turn-ON time
ton
¾
11
¾
Fall time
tf
¾
9
¾
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 ms
¾
63
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
25
¾
Gate-source charge
Qgs
¾
20
¾
Gate-drain (“miller”) charge
Qgd
VDD ~- 24 V, VGS = 10 V, ID = 6 A
¾
5
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
24
A
Forward voltage (Diode)
VDSF
IDR = 6 A, VGS = 0 V
¾
¾
-1.2
V
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 3.0 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking
“·” locates on the left lower side of parts number marking “S2D” indicates terminal
No.1.
(a)
FR-4
2510 ms*
(b)
FR-4
25.4
´ 25.4 ´ 0.8
Unit: (mm)
VDD ~- 15 V
0 V
VGS
10 V
ID = 3 A
VOUT


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