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2SK3274S Datasheet(PDF) 3 Page - Renesas Technology Corp

No. de pieza 2SK3274S
Descripción Electrónicos  Slilicon N Channel MOS FET High Speed Power Switching
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK3274S Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SK3274 (L), 2SK3274 (S)
Rev.3.00 May 15, 2006 page 3 of 8
Main Characteristics
40
0
0
10
20
30
50
100
150
200
100
50
20
10
5
2
12
5
10
20
50
100
50
0
0
10
20
30
40
24
6
8
10
50
0
0
10
20
30
40
24
68
10
0.5
1
0.2
200
Ta = 25°C
10 V
VGS = 3.5 V
Tc = 75°C
25°C
–25°C
4 V
4.5 V
6 V
5 V
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Operation in
this area is
limited by RDS(on)
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
0
0
0.2
0.4
0.6
0.8
4
8
12
16
20
0.1
0.5
2
50
0.2
1
10 20
5
0.05
0.02
0.01
0.005
0.002
0.001
1.0
ID = 20 A
10 A
5 A
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current
ID (A)
10
µs
100
µs
1 ms
PW
= 10
ms
(1shot)
DC
Operation
(Tc
=
25°C)
10 V
VGS = 4.5 V
Pulse Test


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