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IRF7328 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7328 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7328 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = -2.0A Qrr Reverse Recovery Charge ––– 36 54 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -32 -2.0 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.018 ––– V/°C Reference to 25°C, ID = -1mA ––– 17 21 VGS = -10V, ID = -8.0A ––– 26.8 32 VGS = -4.5V, ID = -6.8A VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA gfs Forward Transconductance 12 ––– ––– S VDS = -10V, ID = -8.0A ––– ––– -15 VDS = -24V, VGS = 0V ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 52 78 ID = -8.0A Qgs Gate-to-Source Charge ––– 9.8 ––– nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 8.3 ––– VGS = -10V td(on) Turn-On Delay Time ––– 13 20 VDD = -15V, VGS = -10.0V tr Rise Time ––– 15 23 ID = -1.0A td(off) Turn-Off Delay Time ––– 198 297 RG = 6.0Ω tf Fall Time ––– 98 147 RD = 15Ω Ciss Input Capacitance ––– 2675 ––– VGS = 0V Coss Output Capacitance ––– 409 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 262 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G |
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