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NTGS3441T1 Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. NTGS3441T1
Descripción  Power MOSFET 1 Amp, 20 Volts
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTGS3441T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 4 & 5)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −10 mA)
V(BR)DSS
−20
Vdc
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = −20 Vdc, TJ = 70°C)
IDSS
−1.0
−5.0
mAdc
Gate−Body Leakage Current
(VGS = −8.0 Vdc, VDS = 0 Vdc)
IGSS
−100
nAdc
Gate−Body Leakage Current
(VGS = +8.0 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
VGS(th)
−0.45
−1.05
−1.50
Vdc
Static Drain−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −3.3 Adc)
(VGS = −2.5 Vdc, ID = −2.9 Adc)
RDS(on)
0.069
0.117
0.090
0.135
W
Forward Transconductance
(VDS = −10 Vdc, ID = −3.3 Adc)
gFS
6.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
480
pF
Output Capacitance
(VDS = −5.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
265
pF
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
100
pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time
td(on)
13
25
ns
Rise Time
(VDD = −20 Vdc, ID = −1.6 Adc,
tr
23.5
45
ns
Turn−Off Delay Time
(VDD = −20 Vdc, ID = −1.6 Adc,
VGS = −4.5 Vdc, Rg = 6.0 W)
td(off)
27
50
ns
Fall Time
tf
24
45
ns
Total Gate Charge
Qtot
6.2
14
nC
Gate−Source Charge
(VDS = −10 Vdc, VGS = −4.5 Vdc,
ID = −3.3 Adc)
Qgs
1.3
nC
Gate−Drain Charge
ID = −3.3 Adc)
Qgd
2.5
nC
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(IS = −1.6 Adc, VGS = 0 Vdc)
VSD
−0.88
−1.2
Vdc
Diode Forward On−Voltage
(IS = −3.3 Adc, VGS = 0 Vdc)
VSD
−0.98
Vdc
Reverse Recovery Time
(IS = −1.6 Adc, dIS/dt = 100 A/ms)
trr
30
60
ns
4. Indicates Pulse Test: P.W. = 300
msec max, Duty Cycle = 2%.
5. Handling precautions to protect against electrostatic discharge is mandatory.




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