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2N2222A Datasheet(PDF) 2 Page - Diotec Semiconductor |
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2N2222A Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 2N2222A Characteristics Kennwerte Tj = 25°C Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V 1) IC = 500 mA, VCE = 10 V 1) hFE 35 50 75 100 40 – – – – – – – – 300 – Gain-Bandwidth Product – Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz fT 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – – 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC =ic = 0, f = 1 MHz CEBO – – 30 pF Thermal resistance junction to ambient Wärmewiderstand Sperrschicht – Umgebung RthA < 200 K/W 2) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2 Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG [%] P tot 120 100 80 60 40 20 0 [°C] T A 150 100 50 0 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 1 |
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