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SI7882DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7882DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si7882DP Vishay Siliconix New Product Document Number: 71858 S-21194—Rev. C, 29-Ju1-02 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.000 0.003 0.006 0.009 0.012 0.015 0 1020304050 0 1 2 3 4 5 6 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 800 1600 2400 3200 4000 02468 10 12 Crss Coss Ciss VDS = 6 V ID = 17 A VGS = 4.5 V ID = 17 A Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) VGS = 2.5 V 1.0 1.2 0.000 0.008 0.016 0.024 0.032 0.040 012345 1 10 50 ID = 17 A 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V |
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