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BUK7907-55AIE Datasheet(PDF) 7 Page - NXP Semiconductors

No. de pieza BUK7907-55AIE
Descripción Electrónicos  TrenchPLUS standard level FET
Download  15 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK7907-55AIE Datasheet(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
Product data
Rev. 01 — 12 August 2002
7 of 15
9397 750 09877
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °C; tp = 300 µsTj =25 °C; ID =50A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C; tp = 300 µs
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ni65
0
100
200
300
400
02468
10
VDS (V)
(A)
4.5
5.5
6.5
7.5
20
12
7
6
8
VGS (V) =
4
8.5
10
ID
03ni66
4
5
6
7
8
5
101520
VGS (V)
RDSon
(m
Ω)
03ni67
0
2
4
6
8
10
12
0
20
40
60
80
100
120
ID (A)
RDSon
(m
Ω)
7
8
6
10
6.5
VGS (V) = 5.5
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=


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