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BUK7907-55AIE Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7907-55AIE Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page Philips Semiconductors BUK71/7907-55AIE TrenchPLUS standard level FET Product data Rev. 01 — 12 August 2002 7 of 15 9397 750 09877 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Tj =25 °C; tp = 300 µsTj =25 °C; ID =50A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. Tj =25 °C; tp = 300 µs Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03ni65 0 100 200 300 400 02468 10 VDS (V) (A) 4.5 5.5 6.5 7.5 20 12 7 6 8 VGS (V) = 4 8.5 10 ID 03ni66 4 5 6 7 8 5 101520 VGS (V) RDSon (m Ω) 03ni67 0 2 4 6 8 10 12 0 20 40 60 80 100 120 ID (A) RDSon (m Ω) 7 8 6 10 6.5 VGS (V) = 5.5 03ne89 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 C ° () ----------------------------- = |
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