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TSM2NB65 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM2NB65 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM2NB65 Taiwan Semiconductor 2 Version:B1706 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 650 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 2.5 4 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 1A RDS(ON) -- 4 5 Ω Forward Transfer Conductance VDS = 10V, ID = 1A gfs -- 2.5 -- S Dynamic (Note 4) Total Gate Charge VDS = 520V, ID = 2A, VGS = 10V Qg -- 13 -- nC Gate-Source Charge Qgs -- 2.2 -- Gate-Drain Charge Qgd -- 5 -- Input Capacitance VDS = 25V, VGS = 0V, F = 1.0MHz Ciss -- 390 -- pF Output Capacitance Coss -- 31 -- Reverse Transfer Capacitance Crss -- 8 -- Gate Resistance f = 1.0MHz, open drain Rg 0.8 2.5 7.5 Ω Switching (Note 5) Turn-On Delay Time VGS = 10V, ID = 2A, VDD = 325V, RG =25Ω td(on) -- 8.2 -- ns Turn-On Rise Time tr -- 23.2 -- Turn-Off Delay Time td(off) -- 38 -- Turn-Off Fall Time tf -- 27 -- Source-Drain Diode (Note 3) Diode Forward Voltage IS = 2A, VGS = 0V VSD -- -- 1.2 V Notes: 1. Pulse width limited by the maximum junction temperature 2. L = 20mH, IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25 oC 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Essentially Independent of Operating Temperature. |
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Descripción similar - TSM2NB65 |
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