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TSM2NB65 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM2NB65
Descripción Electrónicos  Halogen-free according to IEC 61249-2-21
Download  8 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM2NB65 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM2NB65
Taiwan Semiconductor
1
Version:B1706
N-Channel Power MOSFET
650V, 2.0A, 5
Ω
FEATURES
● 100% UIS & R
g tested
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATION
● Power Supply
● AC/DC LED Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
650
V
RDS(on) (max)
5
Ω
Qg
13
nC
TO-251 (IPAK SL)
TO-252 (DPAK)
Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
TC = 25°C
ID
2.0
A
TC = 100°C
1.4
Pulsed Drain Current
(Note 1)
IDM
8.0
A
Total Power Dissipation @ TC = 25°C
PDTOT
65
W
Single Pulsed Avalanche Energy
(Note 2)
EAS
25
mJ
Single Pulsed Avalanche Current
(Note 2)
IAS
1.6
A
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1.9
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62.5
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.


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