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IRLZ34N Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza IRLZ34N
Descripción Electrónicos  N-Channel MOSFET Transistor
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRLZ34N Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRLZ34N_18 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRLZ34N_18 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRLZ34N， IIRLZ34N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
55
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =250μA
1.0
2.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=16A
35
mΩ
IGSS
Gate-Source Leakage Current
VGS=±16V
±0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=55V; VGS= 0V
25
μ
A
VSD
Diode forward voltage
IS=16A, VGS = 0 V
1.3
V


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