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ACE14409TFM+H Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE14409TFM+H Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE14409T P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE14409T uses advanced trench technology to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features V DS(V)=-30V I D=-12A R DS(ON)<12mΩ (VGS=-10V) R DS(ON)<18mΩ (VGS=-4.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current (Continuous) * AC TA=25 OC ID -12 A TA=100 OC -7.5 Drain Current (Pulse) * B IDM -48 Power Dissipation TA=25 OC PD 3 W TA=100 OC 1.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type SOP-8 |
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