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DMP34M4SPS Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP34M4SPS
Descripción  30V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP34M4SPS
Document number: DS39884 Rev. 3 - 2
2 of 7
www.diodes.com
October 2017
© Diodes Incorporated
DMP34M4SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current, VGS = -10V (Note 7)
TC = +25°C
TC = +70°C
ID
-135
-110
A
Pulsed Drain Current (380
μs Pulse, Duty Cycle = 1%)
IDM
-350
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-2.9
A
Pulsed Body Diode Forward Current (380
μs Pulse, Duty Cycle = 1%)
ISM
-350
A
Avalanche Current, L = 0.1mH (Note 8)
IAS
-60
A
Avalanche Energy, L = 0.1mH (Note 8)
EAS
180
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.5
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
94
°C/W
Total Power Dissipation (Note 6)
PD
3.0
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
47
°C/W
Total Power Dissipation (Note 7)
PD
100
W
Thermal Resistance, Junction to Case (Note 7)
RJC
1.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -24V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
-1.6
-2.6
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
2.9
3.8
m
VGS = -10V, ID = -20A
4.9
6.0
VGS = -5V, ID = -20A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
3,775
pF
VDS = -15V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
932
pF
Reverse Transfer Capacitance
Crss
500
pF
Gate Resistance
Rg
21
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
127
nC
VDS = -15V, VGS = -10V,
ID = -20A
Gate-Source Charge
Qgs
24.5
nC
Gate-Drain Charge
Qgd
28.5
nC
Turn-On Delay Time
tD(ON)
6.9
ns
VDD = -15V, VGEN = -10V,
RGEN = 3Ω, ID = -20A
Turn-On Rise Time
tR
4.0
ns
Turn-Off Delay Time
tD(OFF)
372
ns
Turn-Off Fall Time
tF
160
ns
Reverse Recovery Time
tRR
26.5
ns
IF = -20A, di/dt = 500A/µs
Reverse Recovery Charge
QRR
37.3
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.




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