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DMP34M4SPS-13 Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza DMP34M4SPS-13
Descripción Electrónicos  30V P-CHANNEL ENHANCEMENT MODE MOSFET
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP34M4SPS-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMP34M4SPS
Document number: DS39884 Rev. 3 - 2
4 of 7
www.diodes.com
October 2017
© Diodes Incorporated
DMP34M4SPS
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = -250μA
I
D = -1mA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
rss
C
oss
C
iss
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
Q
g (nC)
Figure 11. Gate Charge
V
DS = -15V, ID = -20A
0.1
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W = 100ms
P
W = 100µs
P
W = 1µs
DC
R
DS(ON) Limited
P
W = 10µs
P
W = 1ms
T
J(Max) = 150℃ TC = 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS = -10V
P
W = 10ms
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Junction Temperature
V
= 5V
GS
I
= -20A
D
V
= -10V
GS
I = -20A
D
VGS = -5V
ID = -20A


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