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DMP58D0LFB Datasheet(Hoja de datos) 4 Page - Diodes Incorporated

No. de Pieza. DMP58D0LFB
Descripción  P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP58D0LFB
Document number: DS35206 Rev. 10 - 2
4 of 7
www.diodes.com
September 2017
© Diodes Incorporated
DMP58D0LFB
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100
125
150
V
= -5V,
I
= -150mA
GS
D
V
= -10V,
I
= -300mA
GS
D
T , JUNCTION TEMPERATURE (°C)
J
Fig. 6 On-Resistance vs. Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0
0.05
0.1
0.15
0.2
0.25
0.3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
= -2.5V
GS
V
= -5.0V
GS
V
= -3.0V
GS
V
= -4.5V
GS
V
= -1.8V
GS
V
= -2.0V
GS
V
= -4.0V
GS
V
= -10V
GS
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
0
0.05
0.1
0.15
0.2
0.25
0.3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
T = 125°C
A
V
= -5V
GS
-ID, DRAIN CURRENT (A)
Fig. 4 On-Resistance
vs. Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
0
2
4
6
8
10
12
14
16
0
0.05
0.1
0.15
0.2
0.25
0.3
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
VGS = -4.5V
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
0
2
4
6
8
10
12
0
0.05
0.1
0.15
0.2
0.25
0.3
V
= -4.5V
GS
V
= -10V
GS
V
= -2.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
D
S
(
O
N
)
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
= -10V
I = -300mA
GS
D
V
= -5V
I = -150mA
GS
D




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