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DMP58D0LFB Datasheet(Hoja de datos) 3 Page - Diodes Incorporated

No. de Pieza. DMP58D0LFB
Descripción  P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP58D0LFB
Document number: DS35206 Rev. 10 - 2
3 of 7
www.diodes.com
September 2017
© Diodes Incorporated
DMP58D0LFB
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1.0
µA
VDS = -50V, VGS = 0V
Gate-Source Leakage
IGSS
±5
µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-0.8
-2.1
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
6
8
Ω
VGS = -5V, ID = -100mA
12
18
Ω
VGS = -2.5V, ID = -10mA
Forward Transfer Admittance
|Yfs|
0.05
S
VDS = -25V, ID = -100mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
27
pF
VDS = -25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
4.0
Reverse Transfer Capacitance
Crss
1.4
Turn-On Delay Time
tD(ON)
30.7
ns
VGS = -4.5V, VDS = -30V,
RG = 50Ω, ID = -10mA
Turn-On Rise Time
tR
84.1
Turn-Off Delay Time
tD(OFF)
201.8
Turn-Off Fall Time
tF
32.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.




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