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DMP3018SFV-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3018SFV-13
Descripción  30V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3018SFV
Document number: DS40134 Rev. 3 - 2
2 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMP3018SFV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-11
-9
A
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TC = +25°C
TC = +70°C
ID
-35
-25
A
Maximum Continuous Body Diode Forward Current (Note 7)
IS
-30
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
-70
A
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
ISM
-70
A
Avalanche Current (Note 8) L = 1mH
IAS
-14
A
Avalanche Energy (Note 8) L = 1mH
EAS
104
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.0
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
133
°C/W
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.9
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
66
°C/W
Total Power Dissipation (Note 7)
PD
30
W
Thermal Resistance, Junction to Case (Note 7)
RθJC
3.7
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-1
μA
VDS = -24V, VGS = 0V
Gate-Source Leakage
IGSS
±10
μA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
-1.0
-3.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
12
m
VGS = -10V, ID = -11.5A
21
VGS = -4.5V, ID = -8.5A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
2,147
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
407
pF
Reverse Transfer Capacitance
Crss
358
pF
Gate Resistance
Rg
24
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -5V)
Qg
28
nC
VDS = -15V, ID = -11.5A
Total Gate Charge (VGS = -10V)
Qg
51
nC
Gate-Source Charge
Qgs
6.6
nC
Gate-Drain Charge
Qgd
15
nC
Turn-On Delay Time
tD(ON)
7.8
ns
VDD = -15V, VGS = -10V,
RG = 6Ω, ID = -11.5A
Turn-On Rise Time
tR
19.9
ns
Turn-Off Delay Time
tD(OFF)
57.5
ns
Turn-Off Fall Time
tF
42.8
ns
Reverse Recovery Time
tRR
21.5
ns
IS = -11.5A, dI/dt = 100A/μs
Reverse Recovery Charge
QRR
11.6
nC
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.




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