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DMP3026SFDE-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3026SFDE-13
Descripción  P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3026SFDE
Document number: DS38679 Rev. 1 - 2
2 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMP3026SFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-8.7
-6.9
A
t<10s
TA = +25°C
TA = +70°C
ID
-10.4
-8.4
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
IDM
-50
A
Continuous Source-Drain Diode Current (Note 6)
TA = +25°C
IS
-2.0
A
Avalanche Current (Note 7) L = 0.1mH
IAS
-23
A
Avalanche Energy (Note 7) L = 0.1mH
EAS
27
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.72
W
TA = +70°C
0.46
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RJA
175
°C/W
t<10s
121
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.0
W
TA = +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RJA
61
°C/W
t<10s
42
Thermal Resistance, Junction to Case (Note 6)
Steady state
RJC
9.3
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1
µA
VDS = -24V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
-100
Gate-Source Leakage
IGSS
±10
µA
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
15
19
m
VGS = -10V, ID = -4.5A
28
45
VGS = -4.5V, ID = -3.5A
34
54
VGS = -4.0V, ID = -3.0A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
1,204
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
154
Reverse Transfer Capacitance
Crss
112
Gate Resistance
Rg
16
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Qg
19.6
nC
VDS = -15V, ID = -9.5A
Total Gate Charge (VGS = -4.5V)
Qg
9.2
Gate-Source Charge
Qgs
4.3
Gate-Drain Charge
Qgd
3.9
Turn-On Delay Time
tD(on)
5.3
ns
VDS = -15V, VGS = -10V,
RG = 6Ω, ID = -9.5A
Turn-On Rise Time
tr
23
Turn-Off Delay Time
tD(off)
34
Turn-Off Fall Time
tf
26
Reverse Recovery Time
trr
10
ns
IF = -9.5A, di/dt = 100A/μs
Reverse Recovery Charge
Qrr
3.3
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.




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