Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼
Nombre de pieza
         Descripción


DMP3056LSDQ Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3056LSDQ
Descripción  DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Descarga  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo 

   
 2 page
background image
DMP3056LSDQ
Document number: DS40319 Rev. 1 - 2
2 of 6
www.diodes.com
October 2017
© Diodes Incorporated
DMP3056LSDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
ID
-6.9
-5.8
A
Pulsed Drain Current (Note 7)
IDM
-24
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
2.5
W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
50
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
±800
nA
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-1
-1.7
-2.1
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)


45
65
m
VGS = -10V, ID = -6.0A
VGS = -4.5V, ID = -5.0A
Forward Transconductance
gfs
8
S
VDS = -10V, ID = -5.3A
Diode Forward Voltage (Note 8)
VSD
-0.5
-1.2
V
VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
722
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
114
pF
Reverse Transfer Capacitance
Crss
92
pF
Gate Resistance
RG

3.3

VDS = 0V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
QG

6.8

nC
VDS = -15V, VGS = -4.5V,
ID = -6A
QG

13.7

nC
VDS = -15V, VGS = -10V,
ID = -6A
Gate-Source Charge
QGS

1.6

Gate-Drain Charge
QGD

4.2

Turn-On Delay Time
tD(ON)

6.4

ns
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0
Rise Time
tR

5.3

Turn-Off Delay Time
tD(OFF)

26.5

Fall Time
tF

14.7

Notes:
6.
Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
7.
Pulse width
10S, Duty Cycle 1%.
8.
Short duration pulse test used to minimize self-heating effect.




Html Pages

1  2  3  4  5  6 


Datasheet Download




Enlace URL

¿ALLDATASHEET es útil para Ud.?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl