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DMP3056L-7 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP3056L-7
Descripción  30V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3056L
Document number: DS37386 Rev. 4 - 2
2 of 6
www.diodes.com
March 2017
© Diodes Incorporated
DMP3056L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
25
V
Drain Current (Note 5) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.3
-3.4
A
Pulsed Drain Current (Note 6)
IDM
-20
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.38
W
Thermal Resistance, Junction to Ambient (Note 5)
RJA
91
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
100
800
nA
VGS = 20V, VDS = 0V
VGS = 25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-1

-2.1
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)

35
50
50
70
m
VGS = -10V, ID = -6.0A
VGS = -4.5V, ID = -5.0A
Diode Forward Voltage
VSD
-1.2
V
VGS = 0V, IS = -1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
642
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
65
pF
Reverse Transfer Capacitance
Crss
48
pF
Gate Resistance
RG

15

VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
QG

5.8

nC
VDS = -15V, ID = -6A
Total Gate Charge (VGS = -10V)
QG

11.8

nC
VDS = -15V, ID = -6A
Gate-Source Charge
QGS

2.0

Gate-Drain Charge
QGD

2.4

Turn-On Delay Time
tD(ON)

4.9

ns
VDS = -15V, VGS = -10V,
ID = -1A, RG = 6.0
Rise Time
tR

4.7

Turn-Off Delay Time
tD(OFF)

35.2

Fall Time
tF

18.2

Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Pulse width
≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.




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