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TSOP59336TR1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSOP59336TR1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 25 page TSOP593..TR1, TSOP595..TR1 www.vishay.com Vishay Semiconductors Rev. 1.3, 14-Sep-17 2 Document Number: 82790 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BLOCK DIAGRAM APPLICATION CIRCUIT Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient 30 k Ω VS OU T Demo- GND pass AGC Input PIN Band dulator Control circuit 2 3 1, 4 20445-1 C1 IR receiver GND μC R1 + VS GND Transmitter with TSALxxxx VS VO 17170-11 OUT R 1 and C1 recommended to reduce supply ripple for VS < 2.8 V ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage VS -0.3 to +6 V Supply current IS 5mA Output voltage VO -0.3 to 5.5 V Voltage at output to supply VS - VO -0.3 to (VS + 0.3) V Output current IO 5mA Junction temperature Tj 100 °C Storage temperature range Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Power consumption Tamb ≤ 85 °C Ptot 10 mW ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply current Ev = 0, VS = 5 V ISD 0.55 0.7 0.9 mA Ev = 40 klx, sunlight ISH -0.8 - mA Supply voltage VS 2.5 - 5.5 V Transmission distance Ev = 0, test signal see Fig. 1, IR diode TSAL6200, IF = 250 mA d - 40 - m Output voltage low IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see Fig. 1 VOSL - - 100 mV Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see Fig. 1 Ee min. -0.2 0.4 mW/m2 Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see Fig. 1 Ee max. 50 - - W/m2 Directivity Angle of half transmission distance ϕ1/2 -± 45 - deg Ee T tpi *) t VO VOH VOL tpo 2) t 14337 Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, N = 6 pulses, f = f0, t = 10 ms) Output Signal td 1) 1) 3/f 0 < td < 9/f0 2) t pi - 4/f0 < tpo < tpi + 6/f0 *) tpi ≥ 6/f0 is recommended for optimal function 0 0.1 0.2 0.3 0.4 0.5 0.1 10 1000 100 000 E e - Irradiance (mW/m 2) Output pulse width Input burst length λ = 950 nm, optical test signal, Fig. 1 |
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