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DMP6050SPS Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP6050SPS
Descripción  60V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  7 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP6050SPS
Document number: DS40042 Rev. 3 - 2
2 of 7
www.diodes.com
January 2018
© Diodes Incorporated
DMP6050SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-5.7
-4.5
A
Pulsed Drain Current (10
μs Pulse, Duty Cycle = 1%)
IDM
-45
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-2.4
A
Pulsed Body Diode Forward Current (10
μs Pulse, Duty Cycle = 1%)
ISM
-45
A
Avalanche Current (Note 8) L = 0.1mH
IAS
-25
A
Repetitive Avalanche Energy (Note 8) L = 0.1mH
EAS
32
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
1.3
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
RθJA
95
°C/W
Power Dissipation (Note 6)
PD
2.4
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)
RθJA
52
°C/W
Thermal Resistance, Junction to Case @ TC = +25°C (Note 7)
RθJC
2.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-60
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
-1.0
-3.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
43
50
m
Ω
VGS = -10V, ID = -5A
53
70
VGS = -4.5V, ID = -4A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
2163
pF
VDS = -30V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
88
pF
Reverse Transfer Capacitance
Crss
58
pF
Gate Resistance
Rg
13
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
Qg
30
nC
VDS = -30V, ID = -5A
Total Gate Charge (VGS = -4.5V)
Qg
14
nC
Gate-Source Charge
Qgs
5
nC
Gate-Drain Charge
Qgd
4.6
nC
Turn-On Delay Time
tD(ON)
4.7
ns
VGS = -10V, VDS = -30V,
RG = 3Ω, ID = -5A
Turn-On Rise Time
tR
2.7
ns
Turn-Off Delay Time
tD(OFF)
73
ns
Turn-Off Fall Time
tF
25
ns
Body Diode Reverse Recovery Time
tRR
18
ns
IF = -5A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
12
nC
IF = -5A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.




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