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DMP6185SEQ-13 Datasheet(Hoja de datos) 2 Page - Diodes Incorporated

No. de Pieza. DMP6185SEQ-13
Descripción  60V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  6 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP6185SEQ
Document Number DS39536 Rev. 1 - 2
2 of 6
www.diodes.com
February 2017
© Diodes Incorporated
DMP6185SEQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source voltage
VDSS
-60
V
Gate-Source voltage
VGS
20
V
Continuous Drain current (Note 7) VGS = -10V
TA = +25°C
ID
-3
A
TA = +70°C
-2.4
Maximum Body Diode Continuous Current
IS
-2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-15
A
Single Pulsed Avalanche Current (Note 8)
IAS
-16
A
Single Pulsed Avalanche Energy (Note 8)
EAS
13
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.2
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
RθJA
104
°C/W
t<10s
51
Total Power Dissipation (Note 7)
TA = +25°C
PD
2.2
W
TA = +70°C
1.4
Thermal Resistance, Junction to Ambient (Note 7)
Steady state
RθJA
60
°C/W
t<10s
30
Thermal Resistance, Junction to Case (Note 7)
RθJC
7.6
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-60
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS = -48V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
110
150
m
Ω
VGS = -10V, ID = -2.2A
130
185
VGS = -4.5V, ID = -1.8A
Diode Forward Voltage
VSD
-0.75
-0.95
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
708
pF
VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
39
pF
Reverse Transfer Capacitance
Crss
32
pF
Gate Resistance
Rg
17
28
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
6.2
nC
VDS = -30V, ID = -12A
Total Gate Charge (VGS = -10V)
Qg
14
nC
Gate-Source Charge
Qgs
2.8
nC
Gate-Drain Charge
Qgd
3.1
nC
Turn-On Delay Time
tD(on)
5.2
ns
VDS = -30V, RL = 2.5Ω
VGS = -10V, RG = 3Ω
Turn-On Rise Time
tr
23
ns
Turn-Off Delay Time
tD(off)
33
ns
Turn-Off Fall Time
tf
39
ns
Body Diode Reverse Recovery Time
trr
22
ns
IF = -12A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
17
nC
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. UIS in production with L = 0.1mH, starting TA = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.




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