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KM718V887 Datasheet(PDF) 8 Page - Samsung semiconductor

No. de pieza KM718V887
Descripción Electrónicos  256Kx18 Synchronous SRAM
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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KM718V887
256Kx18 Synchronous SRAM
- 8 -
Rev. 2.0
December 1998
AC TIMING CHARACTERISTICS(TA=0 to 70
°C, VDD=3.3V+0.3V/-0.165V)
Notes : 1. All address inputs must meet the specified setup and hold times for all rising clock edges whenever ADSC and/or ADSP is sampled low and
CS is sampled low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Both chip selects must be active whenever ADSC or ADSP is sampled low in order for the this device to remain enabled.
3. ADSC or ADSP must not be asserted for at least 2 Clock after leaving ZZ state.
4. At any given voltage and temperature, tHZC is less than tLZC.
PARAMETER
SYMBOL
KM718V887-7
KM718V887-8
KM718V887-9
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Cycle Time
tCYC
8.5
-
10
-
12
-
ns
Clock Access Time
tCD
-
7.5
-
8
-
9
ns
Output Enable to Data Valid
tOE
-
3.5
-
3.5
-
3.5
ns
Clock High to Output Low-Z
tLZC
0
-
0
-
0
-
ns
Output Hold from Clock High
tOH
2
-
2
-
2
-
ns
Output Enable Low to Output Low-Z
tLZOE
0
-
0
-
0
-
ns
Output Enable High to Output High-Z
tHZOE
-
3.5
-
3.5
-
3.5
ns
Clock High to Output High-Z
tHZC
2
3.5
2
3.5
2
3.5
ns
Clock High Pulse Width
tCH
3
-
4
-
4.5
-
ns
Clock Low Pulse Width
tCL
3
-
4
-
4.5
-
ns
Address Setup to Clock High
tAS
2.0
-
2.0
-
2.0
-
ns
Address Status Setup to Clock High
tSS
2.0
-
2.0
-
2.0
-
ns
Data Setup to Clock High
tDS
2.0
-
2.0
-
2.0
-
ns
Write Setup to Clock High(GW, BW, WEx)
tWS
2.0
-
2.0
-
2.0
-
ns
Address Advance Setup to Clock High
tADVS
2.0
-
2.0
-
2.0
-
ns
Chip Select Setup to Clock High
tCSS
2.0
-
2.0
-
2.0
-
ns
Address Hold from Clock High
tAH
0.5
-
0.5
-
0.5
-
ns
Address Status Hold from Clock High
tSH
0.5
-
0.5
-
0.5
-
ns
Data Hold from Clock High
tDH
0.5
-
0.5
-
0.5
-
ns
Write Hold from Clock High(GW, BW, WEx)
tWH
0.5
-
0.5
-
0.5
-
ns
Address Advance Hold from Clock High
tADVH
0.5
-
0.5
-
0.5
-
ns
Chip Select Hold from Clock High
tCSH
0.5
-
0.5
-
0.5
-
ns
ZZ High to Power Down
tPDS
2
-
2
-
2
-
cycle
ZZ Low to Power Up
tPUS
2
-
2
-
2
-
cycle
Output Load(B)
(for tLZC, tLZOE, tHZOE & tHZC)
Dout
5pF*
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Z0=50
* Capacitive Load consists of all components of
30pF*
the test environment.
RL=50
353
Ω / 1538Ω
+3.3V for 3.3V I/O
319
Ω / 1667Ω
VL=1.5V for 3.3V I/O
VDDQ/2 for 2.5V I/O
/+2.5V for 2.5V I/O


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