2SC1815-O datasheet(1/3 Pages) MCC

No. de pieza	2SC1815-O

Descripción Electrónicos	NPN Silicon Epitaxial Transistor

Download	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	MCC [Micro Commercial Components]

Página de inicio	http://www.mccsemi.com

Logo

1 / 3 page

Features

•

2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

Amplifier and General Purpose Applications.

•

Capable of 0.4Watts of Power Dissipation.

•

Collector-current 0.15A

•

Collector-base Voltage 60V

•

Marking : C1815

2SC1815-

Y

NPN Silicon

Epitaxial Transistor

Electrical Characteristics @ 25

OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=0.1mAdc, IB=0)

50

Vdc

V(BR)CBO

Collector-Base Breakdown Voltage

(IC=100

µAdc, I

E=0)

60

Vdc

V(BR)EBO

Emitter-Base Breakdown Voltage

(I E=100

µAdc,I

C=0)

5

Vdc

ICBO

Collector Cutoff Current

(VCB=60Vdc, IE=0Adc)

0.1

µAdc

ICEO

Collector Cutoff Current

(VCB=50Vdc, IE=0Adc)

0.1

µAdc

IEBO

Emitter Cutoff Current

(VEB=5.0Vdc, IC=0Adc)

0.1

µAdc

ON CHARACTERISTICS

hFE(1)

DC Current Gain*

(IC=2.0mAdc, VCE=6.0Vdc)

70

700

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=100mAdc, IB=10mAdc)

0.25

Vdc

VBE(sat)

Base-Emitter Saturation Voltage

(IC=100mAdc, IB=10mAdc)

1.0

Vdc

SMALL-SIGNAL CHARACTERISTICS

fT

Transistor Frequency

(IC=1.0mAdc, VCE=10Vdc, f=30MHz)

80

MHz

CLASSIFICATION OF HFE (1)

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

VBE

Base-Emitter Voltage

(IE=310mAdc)

---

1.45

Vdc

Revision: G

2013/01/01

omponents

20736 Marilla

Street Chatsworth

!"#

$% !"#

MCC

TM

Micro Commercial Components

www.mccsemi.com

1 of

3

Epoxy meets UL 94 V-0 flammability rating

2SC1815-

GR

2SC1815-

BL

2SC1815-O

•

Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS

Compliant. See ordering information)

•

Moisure Sensitivity Level 1

•

Operating and storage junction temperature range:-55

oC to +125oC

(

VCB=10Vdc, IE=0,f=1MHz)

NF

Noise Figure

---

10

dB

COB

Collector Output Capacitance

---

3.5

pF

(

VCE=6Vdc, IC=0.1mAdc,f=1KHz,Rg=10K)

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.175

.185

4.45

4.70

B

.175

.185

4.45

4.70

C

.500

---

12.70

---

D

.016

.020

0.41

0.63

E

.135

.145

3.43

3.68

.095

.105

2.42

2.67

Straight Lead

A

E

B

C

D

G

E

C

B

E

C

B

BENT LEAD

STRAIGHT LEAD

BULK PACK

AMMO PACK

* For ammo packing detailed specification, click here to visit our website

of product packaging for details.

.

173

.

220

4.40

5.60

Bent Lead

G

TO-92

DIMENSIONS

Halogen free available upon request by adding suffix "-HF"

•

Número de pieza similar - 2SC1815-O

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Micro Commercial Compon...	2SC1815-O	389Kb / 3P	NPN Silicon Epitaxial Transistor
Central Semiconductor C...	2SC1815-O	305Kb / 3P	SILICON NPN TRANSISTORS R1 10-May 2018

More results

Descripción similar - 2SC1815-O

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	MMBC1623L6	29Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	FJY3008R	291Kb / 4P	NPN Epitaxial Silicon Transistor
	FJY3015R	290Kb / 4P	NPN Epitaxial Silicon Transistor
	BC817	162Kb / 5P	NPN Epitaxial Silicon Transistor
	FJY3003R	291Kb / 4P	NPN Epitaxial Silicon Transistor
List of Unclassifed Man...	PJD882	184Kb / 3P	NPN Epitaxial Silicon Transistor
Continental Device Indi...	CSC2120	87Kb / 3P	NPN SILICON EPITAXIAL TRANSISTOR
	CD9581	113Kb / 3P	NPN SILICON EPITAXIAL TRANSISTOR
	CSD545	182Kb / 3P	NPN SILICON EPITAXIAL TRANSISTOR
Samsung semiconductor	BCX70G	34Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
Seme LAB	2N5014	15Kb / 1P	SILICON EPITAXIAL NPN TRANSISTOR

More results

2SC1815-O Datasheet(PDF) 1 Page - Micro Commercial Components

2SC1815-O Datasheet(HTML) 1 Page - Micro Commercial Components

Número de pieza similar - 2SC1815-O

Descripción similar - 2SC1815-O

Html Pages

1 2 3

Datasheet Descarga

Enlace URL