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TSS-53LNB-D Datasheet(PDF) 1 Page - Mini-Circuits

No. de Pieza. TSS-53LNB-D
Descripción  Low Noise Bypass Amplifier Die
Descarga  6 Pages
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Fabricante  MINI [Mini-Circuits]
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TSS-53LNB-D Datasheet(HTML) 1 Page - Mini-Circuits

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A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at
Mini-Circuits® P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500
Product Overview
Mini-Circuits TSS-53LNB-D+ is a low-noise amplifier die offering industry-leading performance over its full
frequency range from 500 MHz to 6 GHz. It contains internal switching, allowing the user control of the am-
plifier to handle both high and low signal levels by bypassing the LNA in the presence of large signals. The
TSS-53LNB-D+ utilizes E-PHEMT technology to achieve excellent noise figure performance in a unique
cascade configuration enabling the combination of very wide band performance and flat gain.
Ultra-wideband: 500 MHz – 6 GHz
Ideal for a wide range of receiver applications including military, commercial wireless,
and instrumentation.
Very flat gain: ±0.4 dB over 0.7-2.1 GHz
Ideal for broadband or multi-band applications. Just one, cost-efficient model required
for multiple frequency usage.
Minimal external matching components
15 dB return loss typ.
Minimizes the need for external matching networks, simplifying circuit designs, and
enabling the amplifier to operate over multiple bands in a single application circuit.
High IP3: 48 dBm typ. (bypass mode)
Provides enhanced linearity over broad frequency range under high signal conditions.
Internal bypass switch feature
Unique design handles low to high signal levels with minimal noise distortion.
Built-in DC blocking cap at RF-Out port &
separate pads for RF-Out & Vdd
Simplifies biasing eliminates need for Bias-Tee at output.
Unpackaged Die
Enables the users to integrate amplifier directly into hybrids.
Key Features
0.5 to 6 GHz
The Big Deal
• Very wideband, 500 MHz – 6 GHz
• Ultra-flat gain, ±0.4 dB from 700 to 2100 MHz
• Low NF over entire frequency band, 1.4 dB
• Internal bypass switching extends useable
dynamic range
Low Noise Bypass Amplifier Die

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