A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
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to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
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Description (See Figure 2)
RF-Input pad. Connect to Ground Via L1. Add a DC blocking cap in series of appropri-
ate value if required.
RF-Output pad. No external DC blocking cap required.
Current Control pad, Voltage level on this pad sets the Idd. Connect to pad Voltage En-
able pad via 3.92 k
Voltage Enable Pad. Voltage level on this pad determines Amplifier is ON or bypassed.
Supply Voltage Pad. Connect to Vdd via L2.
Bottom of Die
• Wideband: 0.5-6 GHz
• Built-in Bypass switching
• Low Noise figure: 1.3 dB typ. at 2.0 GHz
• High Gain: 21.4 dB typ. at 2 GHz
• Ultra Flat Gain: 0.4 dB from 0.7 to 2.1 GHz
• P1dB: +21 dBm typ. at 2.0 GHz
• Minimal matching components
TSS-53LNB-D+ (RoHS compliant) is an advanced ultra-flat gain Low Noise wideband amplifier die fabricated
using E-PHEMT technology offering extremely high dynamic range over a broad frequency range. It has
integrated switches enabling users to bypass the amplifier during high signal conditions. In addition, the
TSS-53LNB-D+has good input and output return loss over a broad frequency range without the need for
external matching components.
• Wireless Base Station Systems
• Test and Measurement Systems
• Multi-Band Receivers
Low Noise Bypass Amplifier Die
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications