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TSS-53LNB-DG+ Datasheet(PDF) 3 Page - Mini-Circuits

No. de Pieza. TSS-53LNB-DG+
Descripción  Low Noise Bypass Amplifier Die
Descarga  6 Pages
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Fabricante  MINI [Mini-Circuits]
Página de inicio  http://www.minicircuits.com
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TSS-53LNB-DG+ Datasheet(HTML) 3 Page - Mini-Circuits

   
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Monolithic E-PHEMT MMIC Amplifier Die
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Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
(3) Permanent damage may occur if any of these limits are exceeded.
Electrical maximum ratings are not intended for continuous normal operation.
(4) Die performance measured in industry standard 3x3 mm 12-lead package.
(5) Do not exceed absolute maximum ratings.
Electrical Specifications(1) at 25°C, Zo=50Ω and V=5V, unless otherwise noted
TSS-53LNB-D+
(1) Measured on Mini-Circuits Die Characterization test board. See Characterization Test Circuit (Fig. 1)
(2) Current increases at P1dB
Absolute Maximum Ratings(3,4)
Parameter
Ratings
Operating Temperature (bottom of die)
-40°C to 85°C
Total Power Dissipation
0.7 W
Input Power
Amplifier-ON
8 dBm (continuous), 19 dBm (5 min max.)
Amplifier Bypass
16 dBm (continuous), 29 dBm (5 min max.)
DC Voltage Vdd
7.0 V
DC Voltage Enable
7.0 V
Max. Voltage on RF-OUT Pad
15 V
Parameter
Condition (GHz)
Amplifier-ON
Amplifier-Bypass
Units
Min.
Typ.
Max.
Typ.
Frequency Range
0.5
6.0
GHz
Noise Figure
0.5
1.4
0.8
dB
1.0
1.2
0.9
2.0
1.3
1.1
4.0
1.6
1.4
5.0
1.7
1.4
6.0
2.2
1.7
Gain
0.5
22.0
-0.8
dB
1.0
21.9
-0.9
2.0
21.4
-1.1
4.0
19.4
-1.7
5.0
18.4
-1.6
6.0
17.1
-2.0
Gain Flatness
0.7 - 2.1
±0.4
±0.7
dB
Input Return Loss
0.5
14.9
23.9
dB
1.0
15.4
18.3
2.0
21.7
14.3
4.0
11.6
10.4
5.0
10.8
14.7
6.0
13.3
13.3
Output Return Loss
0.5
10.5
22.3
dB
1.0
11.7
17.1
2.0
16.4
15.0
4.0
10.3
10.9
5.0
7.9
13.5
6.0
6.6
11.1
Output Power @1dB compression AMP-ON (2)
Input Power @1dB compression AMP-Bypass (4,5)
0.5
20.9
32.0
dBm
1.0
21.0
2.0
20.7
33.0
4.0
19.4
5.0
18.9
27.0
6.0
16.4
32.0
Output IP3
0.5
34.0
45.4
1.0
36.3
46.1
2.0
35.0
45.8
4.0
32.2
41.2
5.0
30.5
40.3
6.0
28.7
38.0
Device Operating Voltage (Vdd)
5.0
4.8-5.2 (5.0 typ.)
V
Device Operating Current (Id)
46
82
105
2
mA
Enable Voltage (Ve)
5.0
0
V
Enable Control Current (Ie)
2.0
0
mA
DC Current (Id) Variation Vs. Voltage
0.007
mA/mV
Thermal Resistance, junction-to-ground lead
48
°C/W
Enable Voltage (Ve) Fig. 1
Min.
Typ.
Max.
Units
Amplifier-ON
4.5
5.0
5.5
V
Amplifier-Bypass
0
0.5
V


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