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TSS-53LNB-DG+ Datasheet(PDF) 4 Page - Mini-Circuits

No. de Pieza. TSS-53LNB-DG+
Descripción  Low Noise Bypass Amplifier Die
Descarga  6 Pages
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Fabricante  MINI [Mini-Circuits]
Página de inicio  http://www.minicircuits.com
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TSS-53LNB-DG+ Datasheet(HTML) 4 Page - Mini-Circuits

   
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Monolithic E-PHEMT MMIC Amplifier Die
Page 4 of 6
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
TSS-53LNB-D+
Fig 1. Block diagram of Test Circuit used for Die characterization. Gain, Return loss, Output
power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using
Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
3. Switching Time: Pin=-25 dBm at 500 MHz. Venable=4.5, 5.0, 5.5V at 10 kHz.
Vd=4.75, 5.0 and 5.5V. (Note 4)
Characterization Test Circuit
Recommended Application Circuit
Fig 2. Recommended Application Circuit.
Switching Specifications (Rise/Fall Time)
Parameter
Min.
Typ.
Max.
Units
Amplifier ON to Bypass
OFF TIME (50% Control to 10% RF)
50
ns
FALL TIME (90 to 10% RF)
12
Amplifier Bypass to ON
ON TIME (50% Control to 90% RF)
740
ns
RISE TIME (10% to 90% RF)
240
Control Voltage Leakage
65
mV
Component
Size
Value
Units
L1
0402
47
nH
L2
0402
56
nH
C1
0402
0.1
µF
C2
0402
10
pF
R1
0402
3.92
K
Component
Size
Value
Units
L1
0402
47
nH
L2
0402
56
nH
R1
0402
3.92
k
C1
0402
0.1
µF
C2
0402
10
pF
C3
0402
1000
pF
Schmitt
Trigger
SN74LVC2G17DCKR
Texas Instruments
Die Layout
Critical Dimensions
Parameter
Values
Die Thickness, µm
100
Die Width, µm
900
Die Length, µm
1000
Bond Pad Size, µm
100 x 100
Fig 4. Bonding Pad Positions
Bonding Pad Position
(Dimensions in µm, Typical)
Fig 3. Die Layout


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