High Reliability Hermetic

Infrared Emitting Diode

© TT electronics plc

Issue A

11/2016

Page 2

TT Electronics | Optek Technology, Inc.

1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200

www.ttelectronics.com | sensors@ttelectronics.com

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

Storage Temperature Range

-65

Operating Temperature Range

-55

Reverse Voltage

2.0 V

Forward DC Current

100 mA

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]

260° C

(1)

Power Dissipation

200 mW

(2)

Electrical Specifications

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Apertured Radiant Incidence

OP235 (TX, TXV)

OP236 (TX, TXV)

1.5

3.5

-

-

-

-

mW/cm

2

Forward Voltage

1.1

1.3

0.9

-

-

-

2.0

2.2

1.8

V

Reverse Current

-

-

100

µA

Wavelength at Peak Emission

-

890

-

nm

β

Spectral Bandwidth between

Half Power Points

-

50

-

nm

Emission Angle at Half Power Points

-

18

-

Degree

Notes:

1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

2. Derate linearly 2.00 mW/° C above 25° C.

not necessarily uniform within the measured area.