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SI1013R Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1013R Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 8 page  Vishay Siliconix Si1013R/X Document Number: 71167 S10-2432-Rev. D, 25-Oct-10 www.vishay.com 1 P-Channel 1.8 V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • High-Side Switching • Low On-Resistance: 1.2 • Low Threshold: 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation •TrenchFET® Power MOSFETs • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation PRODUCT SUMMARY VDS (V) RDS(on) ()ID (mA) - 20 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. SC-75A or SC-89 Top View 2 1 S D G 3 Ordering Information: Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) SC-75A (SOT-416): Si1013R - Marking Code D SC-89 (SOT-490): Si1013X - Marking Code B ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C) b TA = 25 °C ID - 400 - 350 mA TA = 85 °C - 300 - 275 Pulsed Drain Currenta IDM - 1000 Continuous Source Current (Diode Conduction)b IS - 275 - 250 Maximum Power Dissipationb for SC-75 TA = 25 °C PD 175 150 mW TA = 85 °C 90 80 Maximum Power Dissipationb for SC-89 TA = 25 °C 275 250 TA = 85 °C 160 140 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V |
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